2011

Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions

Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions
A. Manchon
IEEE Trans. Mag. 47, 2735 (2011)​​​​​
A. Manchon
.
2011
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form T=T||M×(z×M)+ Tz×M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, T, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque T|| emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.