2018

Ferromagnet-free all-electric spin Hall transistors

Ferromagnet-free all-electric spin Hall transistors
W.Y. Choi, H.-J. Kim, J. Chang, H.S. Han, A. Abbout, H.B.M. Saidaoui, A. Manchon, K.-J. Lee, H.C. Koo
Nano Lett. 18, 7998 (2018).
W.Y. Choi, H.-J. Kim, J. Chang, H.S. Han, A. Abbout, H.B.M. Saidaoui, A. Manchon, K.-J. Lee, H.C. Koo
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2018
‚ÄčThe spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.