Magnetic nanowires for low energy spintronics devices


​In the present project, we propose a highly collaborative, ambitious research program to develop cylindrical nanowire-based, spintronic devices for low-power consumption applications. The objective is to develop electrodeposited, transition metal-based, cylindrical, magnetic nanowires and uncover the nature of current-driven domain wall motion in these systems. In contrast with conventional, planar, rectangular, nanometric thin films, usually exploited for domain wall-based devices, cylindrical magnetic nanowires present a new paradigm for vertical domain wall-based logic and memory devices. The electrodeposition technique commonly used to fabricate magnetic nanowires results in a densely packed array of cylindrical nanowires in an insulating membrane of aluminum oxide, which we envision to become an ultra-high-density 3-dimensional memory device. Of most interest for spin torque applications, the domain wall structures obtained in these devices are very different from the standard Neel and Bloch walls present in thin films. The properties of these complex domain walls are anticipated to result in improved operation capabilities such as low current threshold and high domain wall velocities. This area is still very young and has been scarcely investigated. 


Principal Investigator: A. Manchon​ (KAUST). Co-PI: J. Kosel (KAUST)​