Next Generation UltraLow Power Spin-Orbit Memories


The synthesis of novel two-dimensional (2D) materials has experienced a major burst in the past decade and nurtured the search for innovative device concepts exploiting the spin and pseudospin degrees of freedom. Nevertheless, traditional spintronic devices critically require perpendicular spin injection into magnetic transition metals (Ni, Co, Fe…) exhibiting poor interface quality when deposited on van der Waals substrates. These limitations have severely hindered the performance of flat spintronics devices in spite of the apparent appeal of 2D systems. By gathering an outstanding multidisciplinary team of experts in materials science, devices physics, and materials modeling at KAUST, ICN2 (Barcelona, Spain) and SPINTEC (Grenoble, France), we propose an ambitious and groundbreaking research program that has the potential to disrupt current limitations in spintronics and pave the way to completely novel types of magnetic devices reaching ultralow power consumption, thus impacting on energy dissipation issues of modern electronics. The proposed project builds on the development of spin-orbitronics (exploiting spin-orbit interaction) and the recent synthesis of 2D magnetic TMDs (CrSe2, VTe2 etc.). The objectives of the project consist in designing, modeling, synthesizing and operating a low energy consumption spin-orbit memory made out of a 2D magnet deposited on top of topological insulators or TMDs, the most efficient sources of spin-charge conversion available to date.


Principal Investigator: A. Manchon​ (KAUST), S. Roche (ICN2), S. Valenzuela (ICN2), F. Bonell (SPINTEC). Co-PI: X.X. Zhang, U. Schwingenschlogl (KAUST), ​