Research

Current Research

Controlling the spin relaxation in semiconductor devices is one of the most important step towards spin-based logic. During the diffusion process, the spin degree of freedom encounters a wide variety of scattering events that can destroy its memory. These mechanisms, such as Elliott-Yafet, D'yakonov-Perel or Bir-Pikus-Aronov effects, are strongly materials dependent and an accurate understanding of the interplay between these different processes could lead to a much better control of spin relaxation.
‚ÄčUnderstanding the origin of spin-polarization and ferromagnetism in heterostructures and in doped semiconductors represents an outstanding challenge in the field of spintronics. In particular, we are interested in two major directions: spin-polarization at metal-organic interfaces and d0-ferromagnetism in dilute magnetic oxides.
The experimental observation of laser-induced ultrafast demagnetization of Ni by Beaurepaire et al. in 1996 has opened new avenues in the search for advanced data storage methods. Since then, the magnetization dynamics emerged as an exciting topic and of seminal importance from both fundamental and technological viewpoint especially with the increasing demands on high speed magnetic memories with high storage density.
‚ÄčThe nature of spin transfer torque strongly varies depending on the detailed structure of the magnetic systems under consideration. Although the most successful systems are metallic spin-valves and magnetic tunnel junctions, structures involving antiferromagnets and magnetic insulators also provide interesting signatures.
Current-driven domain wall motion is based on the transfer of angular momentum between the itinerant spin and the local magnetization texture. Our objective is a better understanding of the interaction between the magnetization dynamics and the injected spin current under various regimes. In particular, effect of spin-orbit coupling, sharp domain wall texture and temperature effects are of major interest for us.
Spin-orbit coupling allows for the transfer of angular momentum between the spin and the orbital momenta. In magnetic system, this mechanisms gives rise to a number of exciting phenomena, such as magnetic anisotropy and damping. In the presence of injected current, the spin-orbit coupling produces anomalous Hall effect, original spin relaxation and dynamics as well as spin torque.